Datasheet pdf. Equivalent. Type Designator: TK10A50D. Marking Code: K10A50D. Type of Transistor: MOSFET. Type of Control Channel: N -Channel. Maximum Power Dissipation (Pd): 45 W. Maximum Drain-Source Voltage |Vds|: 500 V.

posibles reemplazos el 2SK3934 y el TK18A50D. Saludos. * TK15A50D.pdf ( 188.45 kB - descargado 77 veces.).

Type Designator: TK10A50D. Marking Code: K10A50D. Type of Transistor: MOSFET. Type of Control Channel: N -Channel. Maximum Power Dissipation (Pd): 45 W. Maximum Drain-Source Voltage |Vds|: 500 V. HMC788A: 0.01 GHz to 10 GHz, MMIC, GaAs, pHEMT RF Gain Block Data Sheet (Rev.

Package : TO220F Type. TK15A50D2013-11-0137.2510COMMON SOURCETc= 25°CPULSE TESTID – VDS datasheet search, datasheets, Datasheet search site for Electronic Components and Semiconductors, integrated circuits, diodes and other semiconductors. TK15A50D Transistor Datasheet, TK15A50D Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics.

1. Enhancement mode: Vth= 2.0 to 4.0 V (VDS= 10 V, ID= 1 mA) 2.

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K15A50D Datasheet – 500V, N-ch MOSFET – Toshiba. This is one of the MOSFET types. This is a kind of the transistor. 1. Enhancement mode: Vth= 2.0 to 4.0 V (VDS= 10 V, ID= 1 mA) 2. Low drain-source ON-resistance: RDS (ON)= 0.24 Ω (typ.) 3.

Marking Code: K10A50D. Type of Transistor: MOSFET. Type of Control Channel: N -Channel. Maximum Power Dissipation (Pd): 45 W. Maximum Drain-Source Voltage |Vds|: 500 V. HMC788A: 0.01 GHz to 10 GHz, MMIC, GaAs, pHEMT RF Gain Block Data Sheet (Rev. D) HMC788A Military Data Sheet PDF K15A60U Datasheet - N-Ch, Vdss=600V, MOSFET - Toshiba, TK15A60U datasheet, K15A60U pdf, K15A60U pinout, K15A60U manual, K15A60U schematic. Datasheet, PDF. Dongguan City Niuhang E List of Unclassifed Man List of Unclassifed Man OCHBHBLE 3NEKTPNYECKNE NAPAMETPBI BASIC SPECIFICATIONS.

K15A50D Toshiba MOSFET. Products (2) Datasheets (1) Images (1) Newest Products. -. Results: 2. Smart Filtering.
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K15A50D Summary of contents. Page 1. AS (Note 5 150 ch −55 to 150 T stg Symbol Max R 2.5 th (ch-c) R 62.5 th (ch-a) = 25°C (initial 4.1 mH Ω TK15A50D Unit Gate A 2: Drain 3: Source W mJ JEDEC ― A JEITA SC-67 mJ TOSHIBA 2-10U1B °C Weight : 1.7 g (typ.) °C Unit °C/W °C Page 2.

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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (MOS), K15A50D datasheet, K15A50D Circuito, K15A50D data sheet : TOSHIBA, alldatasheet,

XTR115, XTR116 4 www.ti.com SBOS124A TYPICAL PERFORMANCE CURVES At TA = +25°C, V+ = 24V, RIN = 20kΩ, and TIP29C external transistor, unless otherwise noted. K15A50D Toshiba MOSFET.